Claire Berger
Research Scientist
Director of Research at the French National Center for Scientific Research (CNRS)
Ph.D. in Physics, University of Grenoble, France
Research Interests

Claire Berger is Director of Research at the French National Center for Scientific Research - Néel Institute working at the Georgia Institute of Technology in W. A. de Heer’s group. She obtained the PhD in Physics from the University of Grenoble, France, with a dissertation on the electronic properties of AlMn quasicrystals. She then moved to a postdoc position at the Centre d’Etudes Atomiques, where she produced and studied amorphous films, and was hired as a researcher at the CNRS ‘s Laboratory for Study of Electronic Properties of Solids (LEPES), in Grenoble. She focused the first part of her carrier on electronic properties of quasicrystalline materials grown and characterized at LEPES. She contributed to the experimental evidence for a metal-insulator transition in these metal- based compounds.


At Georgia Tech, her current scientific interests are primarily nanoscience and electronic property of graphene-based systems. She co-authored the first article demonstrating the two dimensional properties of graphene and proposing graphene for electronics, and together with Walt de Heer and Phil First she co-authored the first patent for graphene electronics (2003).


She is co-author of about 200 publications in international journals, has a citation index of 10,880 and an H index of 41. She was the recipient of CNRS medal for Young Researcher, the Ancel prize of the French Physical Society.  In 2013 she was  elected Fellow of the American Physical Society. She is cited in the 2014 list of the world's most influencial minds by Thomson -Reuter and received the  2014 Reuters highly cited researcher award.



20  selected Publications


Exceptional ballistic transport in epitaxial graphene nanoribbons
J. Baringhaus, M. Ruan , F. Edler, A. Tejeda, M. Sicot, A. Taleb-Ibrahimi, A.P. Li, Z. Jiang, E.H. Conrad, C. Berger, C. Tegenkamp, W. A. de Heer
506, 349 (2014).

Crystalline Silicon Transfer: A “Top-Down” Solution to Integrate Epitaxial Graphene into Silicon CMOS
R. Dong, Z. Guo, M. Ruan, J. Kunc, S. K Bhattacharya, C. Berger, W. A. de Heer
J. Phys D 47, 094001 (8pp) (2014).

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene
J. Hicks, A. Tejeda, A. A. Taleb-Ibrahimi, M.S. Nevius, F. F. Wang, K. Shepperd, J. J. Palmer, F. Bertran, P. Le Fèvre, J. Kunc, W.A. de Heer, C. Berger, E.H. Conrad
Nature Physics 9, 49 (2013).

Record Maximum Oscillation Frequency in C-face Epitaxial Graphene transistors
Z. Guo, R. Dong, P.S. Chakraborty, N. Lourenco, J. Palmer, Y. Hu, M. Ruan, J. Hankinson, J. Kunc, J. D. Cressler, C. Berger, W. A. de Heer
Nano Letters 13, 942 (2013).


Epitaxial graphene on silicon carbide: Introduction to structured graphene (invited)
M. Ruan, Y. Hu, Z. Guo, R. Dong, J. Palmer, J. Hankinson, C. Berger, W. A. de Heer
MRS Bulletin 37, 1146 (2012).

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide
W. A. de Heer, C. Berger, M. Ruan, M. Sprinkle, X. Li, Yike Hu, B. Zhang, J. Hankinson, E.H. Conrad
Proc Nat. Academy Science 108, 16900 (2011).

Scalable templated growth of graphene nanoribbons on SiC
M. Sprinkle, M. Ruan, X. Wu, Y. Hu, M. Rubio-Roy, J. Hankinson, C. Berger, W. A. de Heer
Nature Nanotechnology 5, 727 (2010).

First direct observation of a nearly ideal graphene band structure
M. Sprinkle, D. Siegel, Y. Hu, J. Hicks, P. Soukiassian, A. Tejeda, A. Taleb-Ibrahimi, P. Le Fèvre, F. Bertran, S. Vizzini, H. Enriquez, S. Chiang, C. Berger, W.A. de Heer, A. Lanzara, E.H. Conrad
Phys Rev Lett 103, 226803 (2009).

Anomalous quantum Hall effect in epitaxial graphene
X. Wu, Y. Hu, M. Ruan, N. K Madiomanana, J. Hankinson, M. Sprinkle, C. Berger, W. A. de Heer
Appl Phys Lett 95, 223108 (2009).

Epitaxial Graphene electron devices on SiC substrates
J. Kedzierski, P.-L. Hsu, P. Healey, P. Wyatt, C. Keast, M. Sprinkle, C. Berger, W. de Heer
IEEE /Transactions on Electron Devices 55, 2078 (2008).

Weak Anti-Localization in epitaxial graphene

X. Wu, X. Li, Z. Song, C. Berger, W. A. de Heer
Phys Rev Lett 98, 136801 (2007).


Electronic Confinement and color:#292526;mso-ansi-language:EN-US">Coherence in Patterned mso-ansi-language:EN-US">Epitaxial Graphene
C Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, W. A. de Heer
Science 3012, 1191 (2006).

EN-US">Liquid Carbon, Carbon-Glass  Beads, and the Crystallization EN-US">of Carbon Nanotubes
W. A. de Heer, P. Poncharal, C. Berger, J. Gezo, Z. Song, J. Bettini, D. Ugarte
Science 307, 907 (2005).


FR;mso-fareast-language:EN-US;mso-bidi-language:AR-SA">Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics

C. Berger, Z.Song, T. Li, X. Li, A. Y. Ogbazghi, R. Feng, Z. Dai, A. N. Marchenkov, E. H. Conrad, P. N. First, W. A. de Heer

J. Phys Chem B 108, 19912 (2004).

Room temperature ballistic conduction in carbon nanotubes (invited)
P. Poncharal, C. Berger, Yan Yi, Z. Whang, W. de Heer
J. Phys Chem 106, 12102 (2002) « Feature article »

Evidence for variable range hopping conductivity in the ordered quasicrystal i-AlPdRe
J. Delahaye, J.-P. Brison, C. Berger
Phys Rev Lett 81, 4204 (1998).

Density of states in quasicrystals and approximants : tunneling experiment on bare and oxidized surfaces
N. Davydov, D. Mayou, C. Berger, C. Gignoux, A. Neumann, A. G. M. Jansen, P. Wyder
Phys Rev Lett 77, 3173 (1996).

Evidence for unconventional electronic transport in quasicrystals
D.Mayou, C.Berger, F.Cyrot-Lackmann, T. Klein, P.Lanco
Phys Rev Lett 70, 3915 (1993).

Proximity of a metal-insulator transition in icosahedral phases of high structural quality
T. Klein, C. Berger, D. Mayou, F. Cyrot-Lackmann
Phys Rev Lett 66, 2907 (1991).

Evidence of a spin glass transition in the quasicrystal Al73Mn21Si6
C. Berger, J.-J. Préjean
Phys Rev Lett 64, 1769 (1990).