Graphite Provides New Foundation for Circuitry
Georgia Tech researchers develop new approach to carbon-based electronics
Atlanta (March 14, 2006) — Graphite, the material that gives pencils their marking ability, could be the basis for a new class of nanometer-scale electronic devices that have the attractive properties of carbon nanotubes – but could be produced using established microelectronics manufacturing techniques.
Using
thin layers of graphite known as graphene, researchers at the
Georgia Institute of Technology in the United States, in
collaboration with the Centre National de la Recherche
Scientifique (CNRS) in France, have produced proof-of-principle
transistors, loop devices and circuitry. Ultimately, the
researchers hope to use graphene layers less than 10 atoms thick
as the basis for revolutionary electronic systems that would
manipulate electrons as waves rather than particles, much like
photonic systems control light waves.
“We expect to make devices of a kind that don’t really have an analog in silicon-based electronics, so this is an entirely different way of looking at electronics,” said Walt de Heer, a professor in Georgia Tech’s School of Physics. “Our ultimate goal is integrated electronic structures that work on diffraction of electrons rather than diffusion of electrons. This will allow the production of very small devices with very high efficiencies and low power consumption.”
Supported by the U.S. National Science Foundation and the Intel Corporation, the work was described March 13th at the March Meeting of the American Physical Society. Details of fabrication techniques have been reported in the Journal of Physical Chemistry.
Because carbon nanotubes conduct electricity with virtually
no resistance, they have attracted strong interest for use in
transistors and other devices. However, serious obstacles must
be overcome before nanotube-based devices could be scaled up
into high-volume industrial products, including:
• An inability to produce nanotubes of consistent sizes and
consistent electronic properties,
• Difficulty integrating nanotubes into electronic devices using
processes suitable for volume production, and
• High electrical resistance that produces heating and energy
loss at junctions between nanotubes and the metal wires
connecting them.
Close-up of graphene device
De
Heer, who helped discover many properties of carbon nanotubes
over the past decade, believes their primary value has been in
calling attention to the useful properties of graphene.
Continuous graphene circuitry can be produced using standard
microelectronic processing techniques, potentially allowing
creation of a “road map” for high-volume graphene electronics
manufacturing, he said.
“Nanotubes are simply graphene that has been rolled into a cylindrical shape,” de Heer explained. “Using narrow ribbons of graphene, we can get all the properties of nanotubes because those properties are due to the graphene and the confinement of the electrons, not the nanotube structures.”
De Heer envisions using the graphene electronics for specialized applications, potentially within conventional silicon-based systems. Graphene systems could also be used as the foundation for molecular electronics, helping resolve resistance issues that now affect such systems.
“There is a huge advantage to making a system out of one continuous material, compared to having different materials with different interfaces – and large contract resistances to cause heating at the contacts,” he said.
De Heer and collaborators Claire Berger, Nate Brown, Edward Conrad, Zhenting Dai, Rui Feng, Phillip First, Joanna Hass, Tianbo Li, Xuebin Li, Alexei Marchenkov, James Meindl, Asmerom Ogbazghi, Thomas Orlando, Zhimin Song, Xiaosong Wu of Georgia Tech and Didier Mayou and Cecile Naud of CNRS start with a wafer of silicon carbide, a material made up of silicon and carbon atoms. By heating the wafer in a high vacuum, they drive silicon atoms from the surface, leaving a thin continuous layer of graphene.
Next, they spin-coat onto the surface a photo-resist material
of the kind used in established microelectronics techniques.
Using optical lithography or electron-beam lithography, they
produce patterns on the surface, then use conventional etching
processes to remove unwanted graphene.
“We are doing lithography, which is completely familiar to those
who work in microelectronics,” said de Heer. “It’s exactly what
is done in microelectronics, but with a different material. That
is the appeal of this process.”
Using electron beam lithography, they’ve created feature sizes
as small as 80 nanometers – on the way toward a goal of 10
nanometers with the help of a new nanolithographer in Georgia
Tech’s Microelectronics Research Center. The graphene circuitry
demonstrates high electron mobility – up to 25,000 square
centimeters per volt-second, showing that electrons move with
little scattering. The researchers have also shown electronic
coherence at near room temperature, and evidence of quantum
interference effects. They expect to see ballistic transport
when they make structures small enough.
So far, they have built an all graphene planar field-effect
transistor. The side-gated device produces a change in
resistance through its channel when voltage is applied to the
gate. However, this first device has a substantial current leak,
which the team expects to eliminate with minor processing
adjustments.
The researchers have also built a working quantum interference
device, a ring-shaped structure that would be useful in
manipulating electronic waves.
The key to properties of the new circuitry is the width of the
ribbons, which confine the electrons in a quantum effect similar
to that seen in carbon nanotubes. The width of the ribbon
controls the material’s band-gap. Other structures, such as
sensing molecules, could be attached to the edges of the
ribbons, which are normally passivated by hydrogen atoms.
De Heer and collaborators began working on graphene in 2001 and
received support from Intel in 2003. They later received a
Nanoscale Interdisciplinary Research Team (NIRT) award from the
U.S. National Science Foundation. They have filed one patent for
their methods of fabricating graphene circuitry.
De Heer and his colleagues expect to continue improving their
materials and fabrication processes, while producing and testing
new structures. “We have taken the first step of a very long
road,” de Heer said. “Building a new class of electronics based
on graphene is going to be very difficult and require the
efforts of many people.”
Research News & Publications Office
Georgia Institute of Technology
75 Fifth Street, N.W., Suite 100
Atlanta, Georgia 30308 USA
Media Relations Contact: John Toon (404-894-6986);
E-mail: (jtoon@gatech.edu).
Technical Contacts: Walt de Heer (404-894-7880); E-mail:
(deheer@electra.physics.gatech.edu) or Phil First
(404-894-0548); E-mail: (first@physics.gatech.edu).
Writer: John Toon
Related Links
Georgia Tech School of Physics
http://www.physics.gatech.edu/
Walt de Heer's Lab
http://www.physics.gatech.edu/npeg/npeg.html
The Georgia Institute of Technology is one of the nation's
premiere research universities. Ranked ninth among U.S. News &
World Report's top public universities, Georgia Tech educates
more than 17,000 students every year through its Colleges of
Architecture, Computing, Engineering, Liberal Arts, Management
and Sciences. Tech maintains a diverse campus and is among the
nation's top producers of women and African-American engineers.
The Institute offers research opportunities to both
undergraduate and graduate students and is home to more than 100
interdisciplinary units plus the Georgia Tech Research
Institute. During the 2004-2005 academic year, Georgia Tech
reached $357 million in new research award funding. The
Institute also maintains an international presence with campuses
in France and Singapore and partnerships throughout the world.
(Source: Tech News Release)








