Discovery of New Form of Semiconducting Graphene

Discovery of New Form of Semiconducting Graphene

Discovery of New Form of Semiconducting Graphene

Date

March 1, 2016 -
10:00am to 11:00am

Location

Howey N110

Speaker

Affiliation

Georgia Tech, School of Physics

The goal of graphene electronics research has been to find a semiconducting form of graphene for use in devices. It has been recently shown that the buffer layer, the first layer of graphene on the SiC(0001) face, is a semiconductor with a band gap of >0.5eV. Now, two new semiconducting bands (with a band gap of >1.5eV) have been discovered which relate to a structured graphene geometry; metallic sidewall graphene nanoribbons seamlessly connect to a new form of semiconducting graphene, called terrace buffer. In this talk, we will present growth and structure data as well as ARPES measurements showing the new semiconducting graphene bands.  I will show what growth conditions lead to these new semiconducting bands.